![]() ![]() ![]() Intel's 130 nm logic process will operate at 1.3 volts or less, lowering the voltage over today's state-of-the-art technologies by 20 percent. The combination of faster transistors and high-performance interconnects of Intel's 130 nm process will enable the speed of microprocessor circuits of up to 65 percent relative to that attained with 180 nm technology. Good insulation isolates electric signals keeping the signals from contaminating each other. Low-k dielectric is the insulation between the layers of metallization. ![]() ![]() Wire capacitance is kept low with low-k dielectric of fluorine-doped SiO2 insulator (dielectric constant of 3.6). Intel maintains a high-aspect-ratio (thickness/width) of 1.6:1 with its metal lines, so while decreasing line width to provide better density, metal is kept thick to reduce line resistance. Copper is a better conductor of electrical current than aluminum, which was the metallization material used in earlier Intel process technology generations. The 1.5 nm gate oxide provides industry leading transistor performance at lower operating voltage.īesides the ultra-small transistor gate and thin oxides, Intel's 130 nm logic technology has high performance interconnect technology featuring six-layers of dual damascene copper. The technology also features a 1.5 nm gate oxide that is the thinnest in the industry for a manufacturing technology. Intel's transistor gate measures just 70 nm (0.07 microns in length), the smallest in the industry. To achieve this, Intel uses a small transistor gate and the thinnest of thin films to make these ultra fast transistors. Intel's 130 nm process technology features the world's fastest transistor - the foundation of fast microprocessors. World's Fastest Transistors and High Performance Interconnects We believe that our 130nm process will be the earliest to ramp into volume production and to deliver products with leading edge performance, density, and power efficiency." "We started working on these advancements several years ago. "Intel's 130nm process incorporates an unusually large number of simultaneous technology advancements," added Chou. "It is a credit to our development teams who have repeatedly overcome rising technical challenges to accelerate the arrival of new generations of silicon technology." Today's announcement extends Intel's 10-year track record of introducing a new process technology every two years. "This accomplishment reaffirms our faith in Moore's Law," said Sunlin Chou, Intel vice president and general manager of the Technology and Manufacturing Group. Intel will present details of this process technology at the International Electron Devices Meeting (IEDM) in December 2000. (A nanometer is one billionth of a meter.) Intel is the first to complete development of the 130 nm generation process technology and to demonstrate its manufacturing readiness with complex integrated circuits. The company has built functional static RAMs and microprocessors using this technology, which features 70 nm transistor gate width, 1.5 nm gate oxide thickness, copper interconnects, and low-k dielectrics. An important milestone in Intel's continuing quest to make computer chips smaller and more powerful, this advanced process technology will begin volume manufacturing next year and deliver a new generation of high performance microprocessors, which may contain more than 100 million transistors and run at multi-GHz clock speeds. 7, 2000 - Intel Corporation today announced that it had completed the development of its 0.13 micron (130 nanometer) generation logic technology, allowing it to manufacture chips with transistors that are approximately 1/1000th the width of a human hair. Intel Completes 0.13 Micron Process Technology Development ![]()
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |